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Semiconductor
DN100S
NPN Silicon Transistor
Features
* Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.15V Typ. @IC /IB =400mA/20mA) * Suitable for low voltage large current drivers * Complementary pair with DP100S * Switching Application
Ordering Information
Type NO. DN100S Marking N03 Package Code SOT-23F
Outline Dimensions
2.40.1 1.60.1
unit : mm
1
2.90.1 1.90 BSC
3 2
0.150.05 0.40.05
PIN Connections 1. Base 2. Emitter 3. Collector
KST-2117-000
0.90.1
0~0.1
1
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DN100S
(Ta=25 C)
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
Symbol
VCBO VCEO VEBO IC PC Tj T stg
Ratings
15 12 5 1 200 150 -55~150
Unit
V V V A mW C C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25 C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) fT C ob
Test Condition
IC=50A, I E =0 IC=1mA, IB =0 IE =50A, IC =0 VCB=12V, IE =0 VEB =5V, I C=0 VCE=1V, IC =100mA VCE=1V, IC =1A IC=400mA, IB =20mA IC=400mA, IB =20mA VCE=5V, IC =50mA VCB=10V, IE =0, f=1MHz
Min.
15 12 5 200 70 -
Typ.
260 5
Max.
0.1 0.1 450 0.25 1.2 -
Unit
V V V A A V V MHz pF
KST-2117-000
2
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DN100S
Electrical Characteristic Curves
Fig. 1 PC - Ta Fig. 2 IC - VBE
Fig. 3 hFE- IC
Fig. 4 VCE(sat)-IC
KST-2117-000
3


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